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buv98a


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                                                                              BUV98AV

                                          NPN TRANSISTOR POWER MODULE

s    HIGH CURRENT POWER BIPOLAR MODULE
s    VERY LOW Rth JUNCTION CASE
s    SPECIFIED ACCIDENTAL OVERLOAD
     AREAS
s    ISOLATED CASE (2500V RMS)
s    EASY TO MOUNT
s    LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
                                                               Pin 4 not connected
s SMPS & UPS

s WELDING EQUIPMENT




                                                                   ISOTOP




                                                       INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                         Parameter                     Value               Unit
     VCEV     Collector-Emitter Voltage (VBE = -5 V)              1000                V
    VCEO(sus) Collector-Emitter Voltage (IB = 0)                   450                V
     VEBO     Emitter-Base Voltage (I C = 0)                        7                 V
       IC     Collector Current                                    30                 A
      ICM     Collector Peak Current (t p = 10 ms)                 60                 A
       IB     Base Current                                          8                 A
      I BM    Base Peak Current (t p = 10 ms)                      16                 A
      Pt ot   Tot al Dissipation at T c = 25 o C                   150                W
                                                                                     o
      T stg   Storage Temperature                              -55 to 150                C
                                                                                     o
       Tj     Max. Ope rating Junction Temperature                 150                   C
                                                                                     o
      VI SO   Insulation Withstand Voltage (AC-RMS)               2500                   C

September 1997                                                                               1/7
BUV98AV

THERMAL DATA
                                                                                                              o
  R thj-ca se   Thermal Resistance Junction-case                                   Max          0.83              C/W
   R t hc-h     Thermal Resistance Case-heatsink With Conductive
                                                                                                              o
                Grease Applied                                                     Max          0.05              C/W

                                                                o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
  Symbol               Parameter                           Test Conditions               Min.   Typ.   Max.   Unit
      I CER     Collecto r Cut-of f           VCE = VCEV                                                1     mA
                Current (RBE = 5 )            VCE = VCEV        T j = 100 o C                           8     mA
       ICEV     Collecto r Cut-of f           VCE = VCEV                                               0. 4   mA
                Current (VBE = -5V)           VCE = VCEV        T j = 100 o C                           4     mA
      I EBO     Emitter Cut-off Current VEB = 5 V                                                       2     mA
                (I C = 0)
VCEO(SUS) * Collecto r-Emitter                I C = 0.2 A   L = 25 mH                    450                      V
            Sustaining Voltage                Vc lamp = 450 V
      hFE       DC Current Gain               I C = 24 A    VCE = 5 V                            9
  V CE(sat )    Collecto r-Emitter            I C = 16 A    IB = 3.2 A                                 1. 5       V
                Saturation Voltage            I C = 24 A    IB = 5 A                                    5         V
  VBE( sat)     Base-Emitter                  I C = 16 A    IB = 3.2 A                                 1. 6       V
                Saturation Voltage
      diC /dt   Rate of Rise of               VCC = 300 V RC = 0            tp = 3 



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