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                                                                                       BUW50

                                  SILICON NPN SWITCHING TRANSISTOR

s   SGS-THOMSON PREFERRED SALESTYPE

s   VERY LOW SATURATION VOLTAGE AND
    HIGH GAIN FOR REDUCED LOAD
    OPERATION
s   TURN-ON AND TURN-OFF TAIL
    SPECIFICATIONS
s   TURN-ON dic/dt FOR BETTER RECTIFIER
    CHOICE                                                                             3
                                                                                   2
s   SWITCHING TIMES SPECIFIED WITH AND                                         1
    WITHOUT NEGATIVE BASE DRIVE
s   FAST SWITCHING TIMES
                                                                      TO-218
s   LOW SWITCHING LOSSES
s   LOW ON-STATE VOLTAGE DROP
s   BASE CURRENT REQUIREMENTS



                                                          INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                        Parameter                         Value                  Unit
     V CEV    Collector-emitter Voltage (V BE = -1.5V)               250                    V
     V CEO    Collector-emitter Voltage (I B = 0)                    125                    V
     V EBO    Emitter-Base Voltage (I C = 0)                          7                     V
       IC     Collector Current                                      25                     A
      I CM    Collector Peak Current                                 50                     A
       IB     Base Current                                            6                     A
      I BM    Base Peak Current                                      12                     A
     P Base   Reverse Bias Base Power Dissipation                     2                     W
              (B.E. junction in avalance)
      P tot   Total Power Dissipation at T case  25 o C              150                    W
                                                                                           o
     T stg    Storage Temperature                                 -65 to 175                   C
                                                                                           o
       Tj     Max Operating Junction Temperature                     175                       C



October 1995                                                                                       1/5
BUW50

THERMAL DATA
                                                                                                                          o
  R thj-case      Thermal Resistance Junction-case                                          Max              1                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol                 Parameter                             Test Conditions                       Min.   Typ.   Max.   Unit
       I CER      Collector Cut-off           V CE = V CEV                                                          1     mA
                  Current (R BE = 10)         V CE = V CEV            T c = 100o C                                  5     mA
       I CEV      Collector Cut-off           V CE = V CEV       V BE = -1.5V                                       1     mA
                  Current                     V CE = V CEV       V BE = - 1.5V T C =100 o C                         5     mA
       I EBO      Emitter Cut-off             V EB = 5 V                                                            1     mA
                  Current (I C = 0)
 VCEO(sus)  Collector-Emitter                 I C = 0.2A                                             125                      V
            Sustaining Voltage                L = 25 mH
       V EB0      Emitter-base                I E = 50 mA                                             7                       V
                  Voltage (I c = 0)
  V CE(sat)       Collector-Emitter           IC     =   10A     IB   =   0.5A                               0.4   0.8        V
                  Saturation Voltage          IC     =   20A     IB   =   2A                                 0.6   0.9        V
                                              IC     =   10A     IB   =   0.5A   T j = 100 o C               0.5   0.9        V
                                              IC     =   20A     IB   =   2A     T j = 100 o C              0.75   1.5        V
  V BE(sat)       Base-Emitter                I C = 20A          IB = 2A                                    1.25   1.6        V
                                                                                               o
                  Saturation Voltage          I C = 20A          IB = 2A             T j = 100 C            1.25   1.7        V
      di c /dt    Rate of Rise of             V CC = 160V             RC = 0         I B1 =3A
                  on-state Collector                                                 T j = 25o C     50     100           A/

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