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buw89


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                                                                                       BUW89

                               HIGH POWER NPN SILICON TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   HIGH CURRENT CAPABILITY
s   FAST SWITCHING SPEED
s   VERY LOW SATURATION VOLTAGE AND
    HIGH GAIN

APPLICATION
s SWITCHING REGULATORS                                                                 3
                                                                                   2
s MOTOR CONTROL                                                                1
s HIGH FREQUENCY AND EFFICENCY
  CONVERTERS
                                                                     TO-218
DESCRIPTION
The BUW89 is a Multiepitaxial planar NPN
transistor in TO-218 plastic package.
It's intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.                                 INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                         Parameter                        Value                  Unit
     V CEV     Collector-emitter Voltage (V BE = -1.5V)              160                    V
     V CEO     Collector-emitter Voltage (I B = 0)                   90                     V
     V EBO     Emitt er-Base Voltage (IC = 0)                         7                     V
       IC      Collector Current                                     25                     A
      I CM     Collector Peak Current                                45                     A
       IB      Base Current                                           6                     A
      I BM     Base Peak Current                                      9                     A
     P Base    Reverse Bias Base Power Dissipation                    1                     W
               (B.E. junction in avalanche)
                                                     o
      P t ot   Total Power Dissipation at T case < 25 C              125                    W
                                                                                           o
     T stg     Storage T emperature                               -65 to 175                   C
                                                                                           o
       Tj      Max Operating Junction T emperature                   175                       C


July 1997                                                                                          1/5
BUW89

THERMAL DATA
                                                                                                                       o
  R t hj-ca se   Thermal Resistance Junction-case                                        Max            1.2                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol               Parameter                             Test Cond ition s                  Min.   Typ .   Max.   Un it
       I CER     Collector Cut-off            V CE = V CEV                                                       1     mA
                                                                               o
                 Current (R BE = 10)          V CE = V CEV        T c = 100 C                                    5     mA
       I CEV     Collector Cut-off            V CE = V CEV       V BE = -1.5V                                    1     mA
                                                                                      o
                 Current                      V CE = V CEV       V BE = - 1.5V TC =100 C                         5     mA
       I EBO     Emitter Cut-off              V EB = 5 V                                                         1     mA
                 Current (IC = 0)
 V CEO(sus ) Collector-Emitter                I C = 0.2A                                         90                        V
             Sustaining Voltage               L = 25 mH
       V EB0     Emitter-base                 I E = 50 mA                                         7                        V
                 Voltage (Ic = 0)
  V CE(sat )     Collector-Emitter            IC   =   7.5A      IB   =   0.375A                         0.5    0.8        V
                 Saturation Voltage           IC   =   15A       IB   =   1.5A                          0.65    0.9        V
                                              IC   =   7.5A      IB   =   0.375A Tj = 100 oC             0.5    0.9        V
                                                                                          o
                                              IC   =   15A       IB   =   1.5A   Tj = 100 C              0.8    1.5        V
  V BE(s at)     Base-Emitter                 I C = 15A          IB = 1.5A                               1.4    1.7        V
                                                                                           o
                 Saturation Voltage           I C = 15A          IB = 1.5A         Tj = 100 C           1.45    1.8        V
      dic /dt    Rated of Rise of             V CC = 72V        R C =0             I B1 =2.25A
                 on-st ate Collect or                                              T j = 25o C   35      50            A/



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