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bux12


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                                                                              BUX12

                        HIGH CURRENT NPN SILICON TRANSISTOR

s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   HIGH CURRENT CAPABILITY
s   FAST SWITCHING SPEED

APPLICATIONS
s MOTOR CONTROL
s LINEAR AND SWITCHING INDUSTRIAL

  EQUIPMENT
                                                                  1
                                                                          2
DESCRIPTION
The BUX12 is a silicon multiepitaxial planar NPN
transistor in Jedec TO-3 metal case, intended for                      TO-3
use in switching and linear applications in military
and industrial equipment.




                                                         INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                         Value          Unit
     V CBO   Collector-base Voltage (I E = 0)                       300               V
     V CEX   Collector-emitter Voltage (V BE = - 1.5V)              300               V
     V CEO   Collector-emitter Voltage (I B = 0)                    250               V
     V EBO   Emitter-base Voltage (Ic = 0)                            7               V
      IC     Collector Current                                        20              A
     I CM    Collector Peak Current (t P = 10 ms)                     25              A
      IB     Base Current                                             4               A
     P tot   Total Power Dissipation at T case  25 Co
                                                                    150               W
                                                                                      o
     T stg   Storage Temperature                                 -65 to 200               C
                                                                                      o
      Tj     Max Operating Junction Temperature                     200                   C


February 1997                                                                                 1/4
BUX12

THERMAL DATA
                                                                                                          o
  R thj-case   Thermal Resistance Junction-case                              Max            1.17              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol              Parameter                          Test Conditions             Min.   Typ.   Max.   Unit
      I CEO    Collector Cut-off            V CE = 200 V                                           1.5    mA
               Current (I B = 0)
      I CEX    Collector Cut-off            V CE = 300 V             V BE = -1.5V                  1.5    mA
               Current                      T case = 125 o C
                                            V CE = 300 V             V BE = -1.5V                   6     mA
      I EBO    Emitter Cut-off Current      V EB = 5 V                                              1     mA
               (I C = 0)
 V CEO(sus)  Collector-Emitter              I C = 200 mA                             250                      V
             Sustaining Voltage
      V EBO    Emitter-Base Voltage         I E = 50 mA                               7                       V
               (I C = 0)
  V CE(sat)    Collector-Emitter            IC = 5 A                  I B = 0.5 A           0.22    1         V
               Saturation Voltage           I C = 10 A                I B = 1.25 A           0.5   1.5        V
  V BE(sat)    Base-Emitter                 I C = 10 A                I B = 1.25 A          1.23   1.5        V
               Saturation Voltage
      h FE     DC Current Gain              IC = 5 A                  V CE = 4 V     20             60
                                            I C = 10 A                V CE = 4 V     10
      I S/b    Second Breakdown             V CE = 30 V               t=1s             5                      A
               Collector Current            V CE = 140 V              t=1s           0.15                     A
       fT      Transistor Frequency         IC = 1 A                  V CE = 15 V     8                   MHz
                                            f = 10 MHz
       t on    Turn-on Time                 I C = 10 A               I B1 = 1.25 A          0.28    1         



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