Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors ST bux22
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download bux22 documenatation <<
Text preview - extract from the document
BUX22
HIGH CURRENT NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
APPLICATIONS
s MOTOR CONTROL
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
1
s HIGH POWER TO-3 PACKAGE 2
DESCRIPTION
The BUX22 is a silicon multiepitaxial planar NPN TO-3
transistor in modified Jedec TO-3 metal case, (version P)
intended for use in switching and linear
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-base Voltage (I E = 0) 300 V
V CEX Collector-emitter Voltage (V BE = - 1.5V) 300 V
V CEO Collector-emitter Voltage (I B = 0) 250 V
V EBO Emitter-base Voltage (Ic = 0) 7 V
IC Collector Current 40 A
I CM Collector Peak Current (t p = 10 ms) 50 A
IB Base Current 8 A
P tot Total Power Dissipation at T case 25 C
o
350 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max Operating Junction Temperature 200 C
June 1997 1/4
BUX22
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 0.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEO Collector Cut-off V CE = 200 V 3 mA
Current (I B = 0)
I CEX Collector Cut-off V CE = 300 V V BE = -1.5V 3 mA
Current T case = 125 o C
V CE = 300 V V BE = -1.5V 12 mA
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 200 mA 250 V
Sustaining Voltage
V EBO Emitter-Base Voltage I E = 50 mA 7 V
(I C = 0)
V CE(sat) Collector-Emitter I C = 10 A IB = 1 A 0.2 1 V
Saturation Voltage I C = 20 A I B = 2.5 A 0.32 1.5 V
V BE(sat) Base-Emitter I C = 20 A I B = 2.5 A 1.1 1.5 V
Saturation Voltage
h FE DC Current Gain I C = 10 A V CE = 4 V 20 60
I C = 20 A V CE = 4 V 10
I S/b Second Breakdown V CE = 140 V t=1s 0.15 A
Collector Current V CE = 20 V t=1s 17.5 A
fT Transistor Frequency V CE = 15 V IC = 2 A 10 MHz
f = 10 MHz
t on Turn-on Time I C = 20 A I B1 = 2.5 A 0.22 1.3 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo