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                                                                                BUX80

        HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   FAST SWITCHING SPEED

APPLICATIONS
s SWITCHING REGULATORS
s MOTOR CONTROL

s HIGH FREQUENCY AND EFFICENCY

  CONVERTERS
                                                                    1
                                                                            2

DESCRIPTION
The BUX80 is a silicon multiepitaxial mesa NPN                           TO-3
transistor in Jedec TO-3 metal case, particularly
intended for converters, inverters, switching
regulators    and    motors   control    system
applications.

                                                           INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                           Value          Unit
     V CES   Collector-emitter Voltage (V BE = 0)                     800               V
     V CER   Collector-emitter Voltage (R BE = 50)                    500               V
     V CEO   Collector-emitter Voltage (I B = 0)                      400               V
     V EBO   Emitter-base Voltage (Ic = 0)                              10              V
      IC     Collector Current                                          10              A
     I CM    Collector Peak Current                                     15              A
      IB     Base Current                                               5               A
     P tot   Total Power Dissipation at T case      40 C
                                                      o
                                                                      100               W
                                                                                        o
     T stg   Storage Temperature                                   -65 to 150               C
                                                                                        o
      Tj     Max Operating Junction Temperature                       150                   C


June 1997                                                                                       1/4
BUX80

THERMAL DATA
                                                                                                                o
  R thj-case   Thermal Resistance Junction-case                                   Max             1.1               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                            Test Conditions                Min.   Typ.   Max.   Unit
      I CES    Collector Cut-off              V CE = 800 V                                                1     mA
                                                                                       o
               Current (V BE = 0)             V CE = 800 V              T case = 125 C                    3     mA
      I EBO    Emitter Cut-off Current        V BE = 10 V                                                 10    mA
               (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = 100 mA                                 400                      V
             SustainingVoltage
             (I B = 0)
 V CER(sus)  Collector-Emitter                I C = 100 mA                                 500                      V
             Sustaining
             Voltage (R BE = 50 )
  V CE(sat)    Collector-Emitter              IC = 5 A                   IB = 1 A                        1.5        V
               Saturation Voltage             IC = 8 A                   I B = 2.5 A                      3         V
  V BE(sat)    Base-Emitter                   IC = 5 A                   IB = 1 A                        1.4        V
               Saturation Voltage             IC = 8 A                   I B = 2.5 A                     1.8        V
      h FE     DC Current Gain                I C = 1.2 A               V CE = 5 V                30

       t on    Turn-on Time                   IC = 5 A                   I B1 = 1 A                      0.5        

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