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                                                      High voltage NPN power transistor

   High voltage capability (450 V VCEO)
   Minimum lot-to-lot spread for reliable operation
   High DC current gain

   Flyback and forward single transistor low                                               2
   power converters
The BUX87 is manufactured using high voltage
multi-epitaxial planar technology for high              Figure 1.      Internal schematic diagram
switching speeds and high voltage withstand

Table 1.       Device summary
        Order code                  Marking                       Package                  Packaging

             BUX87                  BUX87                         SOT-32                           Tube

April 2009                                    Doc ID 4508 Rev 5                                                 1/9
Electrical ratings                                                              BUX87

1           Electrical ratings

            Table 2.      Absolute maximum ratings
             Symbol                        Parameter                 Value      Unit

               VCES    Collector-emitter voltage (VBE = 0)           1000        V
              VCEO     Collector-emitter voltage (IB = 0)             450        V
              VEBO     Emitter-base voltage (IC = 0)                   5         V
                IC     Collector current                              0.5        A
               ICM     Collector peak current (tp  5ms)                1         A
                IB     Base current                                   0.3        A
               IBM     Base peak current (tp  5ms)                    0.6        A
               PTOT    Total power dissipation at Tc = 25 

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