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                                                                                 BUY49S

                                                        SILICON NPN TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   FAST SWITCHING SPEED
s   LOW COLLECTOR EMITTER SATURATION

APPLICATIONS
s GENERAL PURPOSE SWITCHING

DESCRIPTION
The BUY49S is a silicon epitaxial planar NPN
transistor in jedec TO-39 package. It is used in
high-current switching applications up to 3 A.
                                                                        TO-39




                                                           INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                           Value          Unit
     V CBO   Collector-Base Voltage (IE = 0)                          250               V
     V CEO   Collector-Emitter Voltage (I B = 0)                      200               V
     V EBO   Emitter-Base Voltage (IC = 0)                             6                V
      IC     Collector Current                                         3                A
     I CM    Collector Peak Current                                    5                A
     P tot   Total Power Dissipation at T amb  25 o C                  10               W
                                                                                        o
     T stg   Storage Temperature                                   - 65 to 200              C
                                                                                        o
      Tj     Max Operating Junction Temperature                       200                   C


June 1997                                                                                       1/4
BUY49S

THERMAL DATA
                                                                                                                 o
  R thj-case    Thermal Resistance Junction-case                                     Max            15               C/W
                                                                                                                 o
  R thj-amb     Thermal Resistance Junction-case-ambient                             Max           175               C/W

                                                                   o
ELECTRICAL CHARACTERISTICS (Tcase = 25                             C unless otherwise specified)
  Symbol               Parameter                             Test Conditions               Min.    Typ.   Max.   Unit
      I CBO     Collector Cut-off              V CB = 200 V                                               0.1        

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