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                                                                                  BUF405A
                                                                                 BUF405AFI
                                             HIGH VOLTAGE FAST-SWITCHING
                                                  NPN POWER TRANSISTORS
s    HIGH SWITCHING SPEED NPN POWER
     TRANSISTORS
s    EASY TO DRIVE
s    HIGH VOLTAGE FOR OFF-LINE
     APPLICATIONS
s    100 KHz SWITCHING SPEED
s    LOW COST DRIVE CIRCUITS
s    LOW DYNAMIC SATURATION
                                                                             3                         3
                                                                         2                         2
APPLICATIONS:                                                       1                          1
s SWITCH MODE POWER SUPPLIES
s MOTOR DRIVERS
                                                           TO-220                 ISOWATT220
DESCRIPTION
These Easy-to-Drive FASTSWITCH NPN power
transistors are specially designed for high
reliability industrial and professional power driving
                                                         INTERNAL SCHEMATIC DIAGRAM
applications such us motor drives and off-line
switching power supplies. ETD transistors will
operate using easy drive circuits at up to 100KHz;
this helps to simplify designs and improve
reliability. The superior switching performance
and low crossover losses reduce dissipation and
consequently lowers the equipment operating
temperature.




ABSOLUTE MAXIMUM RATINGS
    Symb ol                      Parameter                              Valu e                 Un it
                                                          BUF405A                BUF 405AFI    Un it
     V CEV    Collector-Emitter Voltage (VBE = -1.5 V)                  1000                     V
     V CEO    Collector-Emitter Voltage (IB = 0)                        450                      V
     VEBO     Emitter-Base Voltage (IC = 0)                               7                      V
        IC    Collector Current                                          7.5                     A
      I CM    Collector Peak Current (tp < 5 ms)                         15                      A
        IB    Base Current                                                3                      A
      I BM    Base Peak Current (tp < 5 ms)                              4.5                     A
                                           o
      P tot   T otal Dissipation at Tc = 25 C                80                     40          W
                                                                                                o
     T s tg   Storage Temperature                                   -65 to 150                    C
                                                                                                o
        Tj    Max O peration Junction Temperature                      150                        C


July 1997                                                                                              1/6
BUF405A / BUF405AFI

THERMAL DATA
                                                                                                                              o
                                                                                           TO-220         IS OW ATT 220           C/W
                                                                                                                              o
  R t hj-ca se   Thermal Resistance Junction-Case                                Max           1.56              3.12             C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                            Test Cond ition s                     Min.    Typ .     Max.      Un it
      I CER      Collector Cut-off         V CE = V CEV                                                                 0.1       mA
                                                                            o
                 Current (R BE = 5 )       V CE = V CEV        T c = 100 C                                              0.5       mA
      I CEV      Collector Cut-off         V CE = V CEV V BE = -1.5 V                                                   0.1       mA
                                                                             o
                 Current (IB = 0)          V CE = V CEV V BE = -1.5 V Tc =100 C                                         0.5       mA
      I EBO      Emitter Cut-off Current   V BE = 5 V                                                                   1         mA
                 (I C = 0)
 V CEO(sus ) Collector-Emitter             I C = 200 mA                           L = 25 mH       450                             V
             Sustaining Voltage
      V EBO      Emitter Base Voltage      I E = 50 mA                                                7                           V
                 (I C = 0)
 V CE(sat )      Collector-Emitter         IC   =   2.5 A      IB   =   0.25 A                            0.8                     V
                                                                                           o
                 Saturation Voltage        IC   =   2.5 A      IB   =   0.25 A     Tc =100 C                            2.8       V
                                           IC   =   5 A        IB   =   1 A                               0.5                     V
                                           IC   =   5 A        IB   =   1 A       Tc =100 oC                            2         V
 V BE(s at)      Base-Emitter              IC   =   2.5 A      IB   =   0.25 A                            0.9                     V
                                                                                           o
                 Saturation Voltage        IC   =   2.5 A      IB   =   0.25 A     Tc =100 C                            1.5       V
                                           IC   =   5 A        IB   =   1 A                               1.1                     V
                                                                                           o
                                           IC   =   5 A        IB   =   1 A       Tc =100 C                             1.5       V
      di c /dt   Rate of rise on-state     V CC = 300 V             R C = 0 tp = 3 



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