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buf410


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                                                                                  BUF410
                                              HIGH VOLTAGE FAST-SWITCHING
                                                    NPN POWER TRANSISTOR
s    SGS-THOMSON PREFERRED SALESTYPE
s    HIGH VOLTAGE CAPABILITY
s    VERY HIGH SWITCHING SPEED
s    MINIMUM LOT-TO-LOT SPREAD FOR
     RELIABLE OPERATION
s    LOW BASE-DRIVE REQUIREMENTS

APPLICATIONS:
s SWITCH MODE POWER SUPPLIES                                                          3
                                                                                  2
s MOTOR CONTROL                                                               1

DESCRIPTION
The BUF410 is manufactured using High Voltage                        TO-218
Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. They
use a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in                    INTERNAL SCHEMATIC DIAGRAM
high-frequency power supplies and motor control
applications.




ABSOLUTE MAXIMUM RATINGS
    Symb ol                       Parameter                        Valu e                 Un it
     V CEV    Collector-Emitter Voltage (VBE = -1.5 V)              850                    V
     V CEO    Collector-Emitter Voltage (IB = 0)                    450                    V
     VEBO     Emitter-Base Voltage (IC = 0)                          7                     V
       IC     Collector Current                                     15                     A
      I CM    Collector Peak Current (tp < 5 ms)                    30                     A
       IB     Base Current                                           3                     A
      I BM    Base Peak Current (tp < 5 ms)                         4.5                    A
      P tot   T otal Dissipation at Tc = 25 o C                     125                    W
                                                                                           o
     T s tg   Storage Temperature                                -65 to 150                    C
                                                                                           o
       Tj     Max O peration Junction Temperature                   150                        C
                                                                                           o
       Tj     Max. Operating Junction T emperature                  150                        C


July 1997                                                                                          1/6
BUF410

THERMAL DATA
                                                                                                                 o
  R t hj-ca se   Thermal Resistance Junction-Case                                    Max           1                 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                        Test Cond ition s                  Min.   Typ .   Max.   Un it
      I CER      Collector Cut-off         V CE = V CEV                                                   0.2    mA
                                                                       o
                 Current (R BE = 100 )     V CE = V CEV    T c = 100 C                                     1     mA
      I CEV      Collector Cut-off         V CE = V CEV V BE = -1.5 V                                     0.2    mA
                                                                             o
                 Current (IB = 0)          V CE = V CEV V BE = -1.5 V Tc =100 C                            1     mA
      I EBO      Emitter Cut-off Current   V BE = 5 V                                                      1     mA
                 (I C = 0)
 V CEO(sus ) Collector-Emitter             I C = 200 mA                      L = 25 mH     450                       V
             Sustaining Voltage
      V EBO      Emitter Base Voltage      I E = 50 mA                                      7                        V
                 (I C = 0)
 V CE(sat )      Collector-Emitter         IC   =5 A       IB   =   0.5 A                         0.8                V
                                                                                     o
                 Saturation Voltage        IC   =5 A       IB   =   0.5 A    T c =100 C                   2.8        V
                                           IC   =10 A      IB   =   2 A                           0.5                V
                                                                                     o
                                           IC   =10 A      IB   =   2 A      T c =100 C                    2         V
 V BE(s at)      Base-Emitter              IC   =5 A       IB   =   0.5 A                         0.9                V
                                                                                     o
                 Saturation Voltage        IC   =5 A       IB   =   0.5 A    T c =100 C                   1.5        V
                                           IC   =10 A      IB   =   2 A                           1.1                V
                                                                                     o
                                           IC   =10 A      IB   =   2 A      T c =100 C                   1.5        V
      di c /dt   Rate of rise on-state     V CC = 300 V R C = 0              tp = 3 



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