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                              High voltage fast-switching NPN power transistor

   High voltage capability
   Very high switching speed
   Minimum lot-to-lot spread for reliable operation
   Low base-drive requirements

Applications                                                                               2

   Switch mode power supplies
   Motor control                                                              TO-247

The BUF410A is manufactured using high voltage             Figure 1.   Internal schematic diagram
multi epitaxial planar technology for high switching
speeds and high voltage capacity. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.

Table 1.     Device summary
   Order code           Marking                        Package                      Packaging

   BUF410A             BUF410A                          TO-247                             Tube

March 2008                                             Rev 3                                             1/9
Electrical ratings                                                                        BUF410A

1           Electrical ratings

            Table 2. Absolute maximum ratings
             Symbol                              Parameter                     Value         Unit

               VCEV      Collector-emitter voltage (V BE = -1.5 V)             1000           V
               VCEO      Collector-emitter voltage (IB = 0)                     450           V
               VEBO      Emitter-base voltage (IC = 0)                           7            V

                IC       Collector current                                      15            A
               ICM       Collector peak current (tP < 5 ms)                     30            A
                IB       Base current                                            3            A
                IBM      Base peak current (tP < 5 ms)                          4.5           A

               Ptot      Total dissipation at Tc = 25 

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