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                                                                                   BUF420
                                                                                  BUF420M
                                              HIGH VOLTAGE FAST-SWITCHING
                                                    NPN POWER TRANSISTOR
s    SGS-THOMSON PREFERRED SALESTYPES
s    NPN TRANSISTOR
s    HIGH VOLTAGE CAPABILITY
s    VERY HIGH SWITCHING SPEED
s    MINIMUM LOT-TO-LOT SPREAD FOR
     RELIABLE OPERATION
s    LOW BASE-DRIVE REQUIREMENTS

APPLICATIONS:                                                                 3     1
s SWITCH MODE POWER SUPPLIES                                         1
                                                                         2                2
s MOTOR CONTROL

DESCRIPTION                                                    TO-218                TO-3
The BUF420 and BUF420M are manufactured                                           (version "R")
using High Voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage capacity. They use a Cellular Emitter
structure with planar edge termination to enhance
switching speeds while maintaining a wide                INTERNAL SCHEMATIC DIAGRAM
RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.                                                                            For TO-3 :
                                                                                         C = Tab
                                                                                         E = Pin2.




ABSOLUTE MAXIMUM RATINGS
    Symb ol                       Parameter                              Valu e                       Un it
     V CEV    Collector-Emitter Voltage (VBE = -1.5 V)                    850                          V
     V CEO    Collector-Emitter Voltage (IB = 0)                          450                          V
     VEBO     Emitter-Base Voltage (IC = 0)                                  7                         V
       IC     Collector Current                                              30                        A
      I CM    Collector Peak Current (tp < 5 ms)                             60                        A
       IB     Base Current                                                   6                         A
      I BM    Base Peak Current (tp < 5 ms)                                  9                         A
                                                           T O-218                TO -3
                                          o
      P tot   T otal Dissipation at Tc = 25 C               200                    200                 W
                                                                                                       o
     T s tg   Storage Temperature                                    -65 to 150                            C
                                                                                                       o
       Tj     Max O peration Junction Temperature                         150                              C


July 1997                                                                                                      1/7
BUF420 / BUF420M

THERMAL DATA
                                                                                                     T O-218           TO-3
                                                                                                                               o
  R t hj-ca se   Thermal Resistance Junction-Case                                              Max    0.63             0.63        C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                             Test Cond ition s                       Min.      Typ .    Max.   Un it
      I CER      Collector Cut-off         V CE = V CEV                                                                  0.2   mA
                                                                                  o
                 Current (R BE = 5 )       V CE = V CEV         T c = 100 C                                               1    mA
      I CEV      Collector Cut-off         V CE = V CEV V BE = -1.5 V                                                    0.2   mA
                                                                             o
                 Current (IB = 0)          V CE = V CEV V BE = -1.5 V Tc =100 C                                           1    mA
      I EBO      Emitter Cut-off Current   V BE = 5 V                                                                     1    mA
                 (I C = 0)
 V CEO(sus ) Collector-Emitter             I C = 200 mA                                L = 25 mH     450                           V
             Sustaining Voltage
      V EBO      Emitter Base Voltage      I E = 50 mA                                                7                            V
                 (I C = 0)
 V CE(sat )      Collector-Emitter         IC   =   10   A       IB   =   1   A                                0.8                 V
                                                                                                o
                 Saturation Voltage        IC   =   10   A       IB   =   1   A         T c =100 C                       2.8       V
                                           IC   =   20   A       IB   =   2   A                                0.5                 V
                                                                                                o
                                           IC   =   20   A       IB   =   2   A         T c =100 C                        2        V
 V BE(s at)      Base-Emitter              IC   =   10   A       IB   =   1   A                                0.9                 V
                                                                                                o
                 Saturation Voltage        IC   =   10   A       IB   =   1   A         T c =100 C                       1.5       V
                                           IC   =   20   A       IB   =   2   A                                1.1                 V
                                                                                                o
                                           IC   =   20   A       IB   =   2   A         T c =100 C                       1.5       V
      di c /dt   Rate of rise on-state     V CC = 300 V R C = 0 t p = 3 



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