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buf420a


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                                                                                  BUF420A
                                              HIGH VOLTAGE FAST-SWITCHING
                                                    NPN POWER TRANSISTOR
s    SGS-THOMSON PREFERRED SALESTYPE
s    HIGH VOLTAGE CAPABILITY
s    VERY HIGH SWITCHING SPEED
s    MINIMUM LOT-TO-LOT SPREAD FOR
     RELIABLE OPERATION
s    LOW BASE-DRIVE REQUIREMENTS

APPLICATIONS:                                                                         3
s SWITCH MODE POWER SUPPLIES                                                      2
s MOTOR CONTROL                                                               1


DESCRIPTION                                                        TO-218
The BUF420A is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
use a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in                    INTERNAL SCHEMATIC DIAGRAM
high-frequency power supplies and motor control
applications.




ABSOLUTE MAXIMUM RATINGS
    Symb ol                       Parameter                        Valu e                 Un it
     V CEV    Collector-Emitter Voltage (VBE = -1.5 V)             1000                    V
     V CEO    Collector-Emitter Voltage (IB = 0)                    450                    V
     VEBO     Emitter-Base Voltage (IC = 0)                          7                     V
       IC     Collector Current                                     30                     A
      I CM    Collector Peak Current (tp < 5 ms)                    60                     A
       IB     Base Current                                           6                     A
      I BM    Base Peak Current (tp < 5 ms)                          9                     A
                                          o
      P tot   T otal Dissipation at Tc = 25 C                       200                    W
                                                                                           o
     T s tg   Storage Temperature                                -65 to 150                    C
                                                                                           o
       Tj     Max O peration Junction Temperature                   150                        C

June 1997                                                                                          1/4
BUF420A

THERMAL DATA
                                                                                                                            o
  R t hj-ca se   Thermal Resistance Junction-Case                                             Max            0.63               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                           Test Cond ition s                          Min.   Typ .   Max.   Un it
      I CER      Collector Cut-off         V CE = V CEV                                                              0.2    mA
                                                                                o
                 Current (R BE = 5 )       V CE = V CEV       T c = 100 C                                             1     mA
      I CEV      Collector Cut-off         V CE = V CEV V BE = -1.5 V                                                0.2    mA
                                                                             o
                 Current (IB = 0)          V CE = V CEV V BE = -1.5 V Tc =100 C                                       1     mA
      I EBO      Emitter Cut-off Current   V BE = 5 V                                                                 1     mA
                 (I C = 0)
 V CEO(sus ) Collector-Emitter             I C = 200 mA                               L = 25 mH       450                       V
             Sustaining Voltage
      V EBO      Emitter Base Voltage      I E = 50 mA                                                 7                        V
                 (I C = 0)
 V CE(sat )      Collector-Emitter         IC   =   10A        IB   =   1   A                                0.8                V
                                                                                             o
                 Saturation Voltage        IC   =   10 A       IB   =   1   A       Tc =100 C                        2.8        V
                                           IC   =   20 A       IB   =   2   A                                0.5                V
                                                                                                  o
                                           IC   =   20 A       IB   =   2   A          T c =100 C                     2         V
 V BE(s at)      Base-Emitter              IC   =   10A        IB   =   1   A                                0.9                V
                                                                                             o
                 Saturation Voltage        IC   =   10 A       IB   =   1   A       Tc =100 C                        1.5        V
                                           IC   =   20 A       IB   =   2   A                                1.1                V
                                                                                                  o
                                           IC   =   20 A       IB   =   2   A          T c =100 C                    1.5        V
      di c /dt   Rate of rise on-state     V CC = 300 V R C = 0 t p = 3 



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