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                                                                           BUF460AV

                                         NPN TRANSISTOR POWER MODULE
s    EASY TO DRIVE TECHNOLOGY (ETD)
s    HIGH CURRENT POWER BIPOLAR MODULE
s    VERY LOW Rth JUNCTION CASE
s    SPECIFIED ACCIDENTAL OVERLOAD
     AREAS
s    ISOLATED CASE (2500V RMS)
s    EASY TO MOUNT
s    LOW INTERNAL PARASITIC INDUCTANCE

APPLICATIONS:
s MOTOR CONTROL
s SMPS & UPS
s WELDING EQUIPMENT                                                ISOTOP




                                                        INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symb ol                        Parameter                      Valu e         Un it
      V CEV    Collector-Emitter Voltage (VBE = -5 V)             1000               V
    V CEO(sus) Collector-Emitter Voltage (IB = 0)                  450               V
      VEBO     Emitter-Base Voltage (IC = 0)                        7                V
       IC      Collector Current                                   80                A
      I CM     Collector Peak Current (tp = 10 ms)                 160               A
       IB      Base Current                                        18                A
      I BM     Base Peak Current (tp = 10 ms)                      27                A
                                           o
      P tot    T otal Dissipation at Tc = 25 C                     270               W
                                                                                     o
      T s tg   Storage Temperature                              -65 to 150               C
                                                                                     o
       Tj      Max O peration Junction Temperature                 150                   C
      V ISO    Insulation W ithstand Voltage (AC-RMS)             2500               V


July 1997                                                                                    1/7
BUF460AV

THERMAL DATA
                                                                                                                            o
  R t hj-ca se   Thermal Resistance Junction-case                                               Max          0.41               C/W
   R thc -h      Thermal Resistance Case-heats ink With Conductive
                                                                                                                            o
                 Grease Applied                                                                 Max          0.05               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                                  Test Cond ition s                   Min.   Typ .   Max.   Un it
       I CER     Collector Cut-off            V CE = V CEV                                                           0.2    mA
                                                                                  o
                 Current (R BE = 5 )          V CE = V CEV              T j = 100 C                                   2     mA
       I CEV     Collector Cut-off            V CE = V CEV                                                           0.2    mA
                                                                                  o
                 Current (V BE = -1.5V)       V CE = V CEV              T j = 100 C                                   2     mA
       I EBO     Emitter Cut-off Current      V EB = 5 V                                                              1     mA
                 (I C = 0)
V CEO(SUS) * Collector-Emitter                I C = 0.2 A     L = 25 mH                               450                       V
             Sustaining Voltage               V c la mp = 450 V
      hFE        DC Current G ain             I C = 60 A           V CE = 5 V                                 15
  V CE(sat )     Collector-Emitter            IC     =   30   A    IB   =   3A                               0.35               V
                                                                                          o
                 Saturation Voltage           IC     =   30   A    IB   =   3 A Tj = 100 C                            2         V
                                              IC     =   60   A    IB   =   12 A                             0.5                V
                                                                                            o
                                              IC     =   60   A    IB   =   12 A T j = 100 C                          2         V
  V BE(s at)     Base-Emitter                 I C = 60 A           I B = 12 A                                1.1                V
                                                                                            o
                 Saturation Voltage           I C = 60 A           I B = 12 A     T j = 100 C                        1.5        V
      di C /dt   Rate of Rise of              V CC = 300 V R C = 0                    tp = 3 



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