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                                                                            BUH615D
                                              HIGH VOLTAGE FAST-SWITCHING
                                                    NPN POWER TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   HIGH VOLTAGE CAPABILITY
s   NPN TRANSISTOR WITH INTEGRATED
    FREEWHEELING DIODE
s   U.L. RECOGNISED ISOWATT218 PACKAGE
    (U.L. FILE # E81734 (N))

APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOUR                                                  3
                                                                                2
  TV                                                                        1

DESCRIPTION
The     BUH615D          is    manufactured    using           ISOWATT218
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
                                                       INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                       Value                  Unit
     V CBO   Collector-Base Voltage (I E = 0)                    1500                    V
     V CEO   Collector-Emitter Voltage (I B = 0)                  700                    V
     V EBO   Emitter-Base Voltage (I C = 0)                        5                     V
      IC     Collector Current                                     8                     A
     I CM    Collector Peak Current (t p < 5 ms)                  12                     A
      IB     Base Current                                          5                     A
     I BM    Base Peak Current (t p < 5 ms)                        8                     A
     P tot   Total Dissipation at T c = 25 o C                    55                     W
                                                                                        o
     T stg   Storage Temperature                               -65 to 150                   C
                                                                                        o
      Tj     Max. Operating Junction Temperature                  150                       C


December 1997                                                                                   1/4
BUH615D

THERMAL DATA
                                                                                                                   o
  R thj-case   Thermal Resistance Junction-case                                         Max          2.3               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                            Test Conditions                   Min.   Typ.   Max.   Unit
      I CES    Collector Cut-off              V CE = 1500 V                                                 0.2    mA
                                                                                o
               Current (V BE = 0)             V CE = 1500 V        Tj = 125 C                                2     mA
      I EBO    Emitter Cut-off Current        V EB = 5 V                                                    300    mA
               (I C = 0)
  V CE(sat)    Collector-Emitter              IC = 6 A            I B = 2.5 A                               1.5        V
               Saturation Voltage
  V BE(sat)    Base-Emitter                   IC = 6 A            I B = 2.5 A                               1.3        V
               Saturation Voltage
      h FE     DC Current Gain                IC = 6 A       V CE = 5 V                        4             9
               RESISTIVE LOAD                 V CC = 400 V         IC = 6 A
       ts      Storage Time                   I B1 = 1.5 A        I B2 = -3 A                        2.7    3.9        

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