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bul118-1


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                                                                        BULD118-1
                                               HIGH VOLTAGE FAST-SWITCHING
                                                     NPN POWER TRANSISTOR
s   HIGH VOLTAGE CAPABILITY
s   LOW SPREAD OF DYNAMIC PARAMETERS
s   MINIMUM LOT-TO-LOT SPREAD FOR
    RELIABLE OPERATION
s   VERY HIGH SWITCHING SPEED

APPLICATIONS:
                                                                                     3
s ELECTRONIC BALLASTS FOR                                                        2
  FLUORESCENT LIGHTING                                                       1
s FLYBACK AND FORWARD SINGLE
  TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION                                                         IPAK
The device is manufactured using high voltage                     (TO-251)
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.                      INTERNAL SCHEMATIC DIAGRAM
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.




ABSOLUTE MAXIMUM RATINGS
    Symbol                        Parameter                      Value                   Uni t
     V CES    Collector-Emitter Voltage (V BE = 0)                700                     V
     V CEO    Collector-Emitter Voltage (I B = 0)                 400                     V
     V EBO    Emitter-Base Voltage (I C = 0)                       9                      V
      IC      Collector Current                                    2                      A
     I CM     Collector Peak Current (tp < 5 ms)                   4                      A
      IB      Base Current                                         1                      A
     I BM     Base Peak Current (t p < 5 ms)                       2                      A
                                           o
     P t ot   Total Dissipation at T c = 25 C                     20                      W
                                                                                          o
     T stg    St orage Temperature                             -65 to 150                     C
                                                                                          o
      Tj      Max. Operating Junction Temperature                 150                         C



July 1997                                                                                         1/7
BULD118-1

THERMAL DATA
                                                                                                             o
  R t hj-ca se   Thermal Resistance Junction-Case                         Max              6.25                  C/W
                                                                                                             o
  R t hj- amb    Thermal Resistance Junction-Ambient                      Max              100                   C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                            Test Cond ition s        Min.     Typ .   Max.   Un it
      I CES      Collector Cut-off            V CE = 700 V                                            100        



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