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HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s FULLY CHARACTERIZED AT 125oC
s LARGE RBSOA 3
s FULLY MOLDED ISOLATED PACKAGE 2
1
s 2000 V DC ISOLATION (U.L. COMPLIANT)
APPLICATIONS TO-220FP
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION INTERNAL SCHEMATIC DIAGRAM
The BUL310FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 1000 V
V CEO Collector-Emitter Voltage (IB = 0) 500 V
V EBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 5 V
I CM Collector Peak Current (tp <5 ms) 10 A
IB Base Current 3 A
I BM Base Peak Current (tp <5 ms) 4 A
o
P t ot Total Dissipation at T c = 25 C 36 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
April 1998 1/6
BUL310FP
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 3.5 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 1000 V 100
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