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High voltage fast-switching NPN power transistor
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Electronic ballast for fluorescent lighting 1
Switch mode power supplies TO-220
The BUL416T is manufactured using diffused
collector in planar technology adopting enhanced Figure 1. Internal schematic diagram
high voltage structure.
Table 1. Device summary
Order code Marking Package Packaging
BUL416T BUL416T TO-220 Tube
August 2009 Doc ID 16097 Rev 1 1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 8
change without notice.
Electrical ratings BUL416T
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 1600 V
VCEO Collector-emitter voltage (IB = 0) 800 V
VEBO Emitter-base voltage (IC = 0) 9 V
IC Collector current 6 A
ICM Collector peak current (tP < 5 ms) 9 A
IB Base current 5 A
IBM Base peak current (tP < 5 ms) 8 A
Ptot Total dissipation at Tc 25
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