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bul416t


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                                                                                                                            BUL416T

                                        High voltage fast-switching NPN power transistor
                                                                                                                                    Preliminary data


Features
    High voltage capability
    Low spread of dynamic parameters
    Very high switching speed

Applications
                                                                                                                                3
                                                                                                                            2
    Electronic ballast for fluorescent lighting                                                                         1

    Switch mode power supplies                                                                               TO-220

Description
The BUL416T is manufactured using diffused
collector in planar technology adopting enhanced                             Figure 1.         Internal schematic diagram
high voltage structure.




Table 1.          Device summary
   Order code                   Marking                                Package                                         Packaging

     BUL416T                   BUL416T                                  TO-220                                              Tube




August 2009                                                  Doc ID 16097 Rev 1                                                                 1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to                      www.st.com   8
change without notice.
Electrical ratings                                                             BUL416T


1           Electrical ratings

            Table 2.    Absolute maximum ratings
              Symbol                            Parameter           Value        Unit

                VCES    Collector-emitter voltage (VBE = 0)         1600          V
                VCEO    Collector-emitter voltage (IB = 0)           800          V
                VEBO    Emitter-base voltage (IC = 0)                 9           V
                 IC     Collector current                             6           A
                ICM     Collector peak current (tP < 5 ms)            9           A
                 IB     Base current                                  5           A
                IBM     Base peak current (tP < 5 ms)                 8           A
                Ptot    Total dissipation at Tc  25 



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