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High voltage fast-switching NPN Power Transistor
General features
NPN Transistor
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
In compliance with the 2002/93/EC European 3
2
Directive 1
TO-220
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
Internal schematic diagram
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Applications
Electronic ballast for fluorescent lighting
Dedicated for PFC solution in HF ballast half-
bridge voltage fed
Order codes
Part Number Marking Package Packing
BUL704 BUL704 TO-220 Tube
May 2006 Rev 1 1/11
www.st.com 11
BUL704
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
BUL704 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (V BE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 10 V
IC Collector current 4 A
ICM Collector peak current (tP < 5ms) 8 A
IB Base current 2 A
IBM Base peak current (tP < 5ms) 4 A
Ptot Total dissipation at T c = 25
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