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BULB742C
High voltage fast-switching
NPN power transistor
Features
Low spread of dynamic parameters
High voltage capability
Minimum lot-to-lot spread for reliable operation
Very high switching speed
3 3
12
2
1
Applications
TO-220 I2PAK
Electronic ballast for fluorescent lighting
Switch mode power supplies
Description
The device is manufactured using high voltage Figure 1. Internal schematic diagram
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
Table 1. Device summary
Order code Marking Package Packaging
BUL742C BUL742C TO-220
Tube
BULB742C-1 BULB742C I2PAK
May 2008 Rev 3 1/12
www.st.com 12
Contents BUL742C - BULB742C
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
BUL742C - BULB742C Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 1050 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms) V(BR)EBO V
IC Collector current 4 A
ICM Collector peak current (tP < 5ms) 8 A
IB Base current 2 A
IBM Base peak current (tP < 5ms) 4 A
Ptot Total dissipation at Tc = 25
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