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                                                                                               BUL743
                                                                  High voltage fast-switching
                                                                       NPN power transistor

Features
   Low spread of dynamic parameters
   High voltage capability
   Minimum lot-to-lot spread for reliable operation
   Very high switching speed
                                                                                               3
                                                                                           2
Applications                                                                           1

   Electronic ballast for fluorescent lighting up to                          TO-220
   256 W (8 x 32 W)
   Switch mode power supplies

Description                                               Figure 1.   Internal schematic diagram

The device is manufactured using the diffused
collector in planar technology adopting new and
enhanced high voltage structure. It has an
intrinsic ruggedness which enables the transistor
to withstand an high collector current level during
breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.




Table 1.      Device summary
   Order code            Marking                       Package                     Packaging

     BUL743              BUL743                        TO-220                          Tube




May 2009                                     Doc ID 15263 Rev 3                                         1/10
                                                                                                   www.st.com   10
Electrical ratings                                                                          BUL743


1           Electrical ratings

            Table 2.       Absolute maximum ratings
             Symbol                              Parameter                       Value        Unit

               VCES      Collector-emitter voltage (VBE = 0)                     1200          V
               VCEO      Collector-emitter voltage (IB = 0)                       500          V
               VEBO      Emitter-base voltage (IC = 0, IB = 6 A, tp < 10 ms)   V(BR)EBO        V
                IC       Collector current                                        12           A
                ICM      Collector peak current (tP < 5 ms)                       24           A
                 IB      Base current                                              6           A
                IBM      Base peak current (tP < 5 ms)                            12           A
                Ptot     Total dissipation at Tc = 25 

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