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                                                                                   BUL87
                                              HIGH VOLTAGE FAST-SWITCHING
                                                    NPN POWER TRANSISTOR

s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   HIGH VOLTAGE CAPABILITY
s   LOW SPREAD OF DYNAMIC PARAMETERS
s   LOW BASE-DRIVE REQUIREMENTS
s   VERY HIGH SWITCHING SPEED
s   FULLY CHARACTERISED AT 125oC

APPLICATIONS:                                                                      3
s ELECTRONIC TRANSFORMER FOR                                                   2
                                                                           1
  HALOGEN LAMPS
s SWITCH MODE POWER SUPPLIES
                                                                 TO-220
DESCRIPTION
The BUL87 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting        INTERNAL SCHEMATIC DIAGRAM
applications and low cost switch-mode power
supplies.




ABSOLUTE MAXIMUM RATINGS
    Symbol                        Parameter                     Value                  Unit
     VCES    Collector-Emitter Voltage (VBE = 0)                 700                    V
     VCEO    Collector-Emitter Voltage (IB = 0)                  400                    V
     VEBO    Emitter-Base Voltage (I C = 0)                       9                     V
      IC     Collector Current                                   12                     A
     ICM     Collector Peak Current (t p < 5 ms)                 24                     A
      IB     Base Current                                         4                     A
     I BM    Base Peak Current (t p < 5 ms)                       8                     A
     Pt ot   Tot al Dissipation at T c = 25 o C                  110                    W
                                                                                       o
     T stg   Storage Temperature                              -65 to 150                   C
                                                                                       o
      Tj     Max. Ope rating Junction Temperature                150                       C



September 1997                                                                                 1/6
BUL87

THERMAL DATA
                                                                                                         o
  R thj-ca se   Thermal Resistance Junction-Case                             Max          1.14               C/W
                                                                                                         o
  Rt hj-amb     Thermal Resistance Junction-Ambient                          Max          62.5               C/W

                                                             o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
  Symbol               Parameter                         Test Conditions           Min.   Typ.   Max.    Unit
      ICES      Collecto r Cut-of f           VCE = 700 V                                        100         

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