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buld1101e


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                                                                              BULD1101E

                               High voltage fast-switching NPN Power Transistor

 General features
     High voltage capability
     Low spread of dynamic parameters
     Minimum lot-to-lot spread for reliable operation
     Very high switching speed
     In compliance with the 2002/93/EC European                           3                              3
                                                                                                     2
     Directive                                                        1                          1

 Description                                                     DPAK                IPAK

                                                                                             t( s)
                                                                                  uc
                                                                 TO-252             TO-251
 The device is manufactured using high voltage
 Multi-Epitaxial Planar technology for high
                                                                                d
 switching speeds and high voltage capability.
 Thanks to an increased intermediate layer, it has
                                                                          P ro
                                                           Internal schematic diagram
                                                                    te
 an intrinsic ruggedness which enables the
 transistor to withstand an high collector current
 level during breakdown condition, without using
                                                                 le
 the transil protection usually necessary in typical
                                                        so
                                                     Ob
 converters for lamp ballast.

 Applications                                      -
 
                                           (s)
     Electronic ballast for fluorescent lighting

                                        ct
                               o du
                   e Pr
        let
    so
 Order codes
  b
O   Part number

  BULD1101ET4
                         Marking

                       BULD1101E
                                                       Package

                                                        DPAK
                                                                               Packaging

                                                                               Tape & reel
  BULD1101E-1          BULD1101E                        IPAK                      Tube




 May 2007                                              Rev 2                                         1/11
                                                                                              www.st.com     11
 Electrical ratings                                                                        BULD1101E


 1           Electrical ratings

             Table 1.       Absolute maximum rating
              Symbol                              Parameter                     Value           Unit

                VCES      Collector-emitter voltage (V BE = 0)                  1100             V
                VCEO      Collector-emitter voltage (IB = 0)                     450             V
                VEBO      Emitter-base voltage (IC = 0)                          12              V

                 IC       Collector current                                       3              A
                 ICM      Collector peak current (tP < 5ms)                       6              A
                  IB      Base current                                           1.5             A
                 IBM      Base peak current (tP < 5ms)                            3              A

                 Ptot     Total dissipation at T c = 25



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