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BULD3N7T4
Medium voltage fast-switching NPN Power Transistor
General features
Medium voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
In compliance with the 2002/93/EC European 3
Directive 1
Description DPAK
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The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
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switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
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Internal schematic diagram
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edge termination to enhance switching speeds
while maintaining the wide RBSOA.
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The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
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H.F. ballast voltage FED where it is coupled with
the BULD3P5T4, its complementary PNP
transistor. -
Applications
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Electronic ballast for fluorescent lighting
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Order codes
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O Part Number
BULD3N7T4
Marking
BULD3N7
Package
DPAK
Packing
Tape & Reel
June 2006 Rev 1 1/10
www.st.com 10
BULD3N7T4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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BULD3N7T4 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (V BE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
Emitter-base voltage
VEBO V(BR)EBO V
(IC = 0, IB = 0.75 A, tp < 100ms, Tj < 150◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo