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buld3n7t4


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                                                                         BULD3N7T4

                        Medium voltage fast-switching NPN Power Transistor

 General features
     Medium voltage capability
     Low spread of dynamic parameters
     Minimum lot-to-lot spread for reliable operation
     Very high switching speed
     In compliance with the 2002/93/EC European                                     3
     Directive                                                                 1

 Description                                                            DPAK
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 The device is manufactured using high voltage
 Multi-Epitaxial Planar technology for high
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 switching speeds and medium voltage capability.
 It uses a Cellular Emitter structure with planar
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                                                          Internal schematic diagram
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 edge termination to enhance switching speeds
 while maintaining the wide RBSOA.
                                                                le
                                                        so
 The device is expressly designed for a new
 solution to be used in compact fluorescent lamps,


                                                     Ob
 H.F. ballast voltage FED where it is coupled with
 the BULD3P5T4, its complementary PNP
 transistor.                                       -
 Applications
                                        ct (s)
 
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     Electronic ballast for fluorescent lighting

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 Order codes
  b
O   Part Number

    BULD3N7T4
                         Marking

                         BULD3N7
                                                    Package

                                                        DPAK
                                                                               Packing

                                                                           Tape & Reel




 June 2006                                          Rev 1                                       1/10
                                                                                           www.st.com   10
                                                                                                                BULD3N7T4


 Contents
 1        Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

 2        Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
          2.1      Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
          2.2      Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

 3        Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

 4        Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9




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 2/10
 BULD3N7T4                                                                             Electrical ratings


 1       Electrical ratings

         Table 1.          Absolute maximum rating
             Symbol                              Parameter                          Value          Unit

              VCES       Collector-emitter voltage (V BE = 0)                         700           V
              VCEO       Collector-emitter voltage (IB = 0)                           400           V
                         Emitter-base voltage
              VEBO                                                                V(BR)EBO          V
                         (IC = 0, IB = 0.75 A, tp < 100ms, Tj < 150



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