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High voltage fast-switching NPN power transistor
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Description 1 1
The device is manufactured using high voltage DPAK IPAK
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current Figure 1. Internal schematic diagram
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
Electronic ballast for fluorescent lighting
Switch mode power supplies.
Table 1. Device summary
Order codes Marking Package Packaging
BULD741T4 BULD741 DPAK Tape & reel
BULD741-1 BULD741 IPAK Tube
July 2007 Rev 2 1/11
Electrical ratings BULD741
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (V BE = 0) 1050 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0, IB = 2A, tP < 10ms) V(BR)EBO V
IC Collector current 2.5 A
ICM Collector peak current (tP < 5ms) 5 A
IB Base current 1.5 A
IBM Base peak current (tP < 5ms) 3 A
Ptot Total dissipation at T c = 25
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