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                               High voltage fast-switching NPN power transistor

    High voltage capability
    Low spread of dynamic parameters
    Minimum lot-to-lot spread for reliable operation
    Very high switching speed
                                                                               3                              3
Description                                                                1                          1

The device is manufactured using high voltage                         DPAK                 IPAK
Multi-Epitaxial Planar technology for high
                                                                      TO-252              TO-251
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current         Figure 1.     Internal schematic diagram
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.

    Electronic ballast for fluorescent lighting
    Switch mode power supplies.

Table 1.      Device summary
   Order codes          Marking                       Package                        Packaging

   BULD741T4            BULD741                        DPAK                          Tape & reel
   BULD741-1            BULD741                        IPAK                             Tube

July 2007                                             Rev 2                                               1/11
Electrical ratings                                                                           BULD741

1           Electrical ratings

            Table 2.       Absolute maximum rating
             Symbol                              Parameter                        Value         Unit

               VCES      Collector-emitter voltage (V BE = 0)                     1050           V
               VCEO      Collector-emitter voltage (IB = 0)                        400           V
               VEBO      Emitter-base voltage (IC = 0, IB = 2A, tP < 10ms)      V(BR)EBO         V

                IC       Collector current                                         2.5           A
               ICM       Collector peak current (tP < 5ms)                          5            A
                IB       Base current                                              1.5           A
                IBM      Base peak current (tP < 5ms)                               3            A

               Ptot      Total dissipation at T c = 25

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