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buld742c


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                                                                                  BULD742C
                                                                 High voltage fast-switching
                                                                      NPN power transistor

Features
   Low spread of dynamic parameters
   High voltage capability
   Minimum lot-to-lot spread for reliable operation
   Very high switching speed                                                          3
                                                                                  1
Applications
   Electronic ballast for fluorescent lighting                               DPAK

   Switch mode power supplies

Description
The device is manufactured using high voltage             Figure 1.   Internal schematic diagram
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.




Table 1.      Device summary
   Order code            Marking                      Package                       Packaging

   BULD742CT4          BULD742C                        DPAK                         Tape & reel




August 2007                                           Rev 1                                            1/12
                                                                                                  www.st.com   12
Contents                                                                                                    BULD742C


Contents

1          Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2          Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
           2.1      Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3          Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4          Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

5          Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

6          Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11




2/12
BULD742C                                                                         Electrical ratings


1          Electrical ratings

           Table 2.      Absolute maximum rating
            Symbol                             Parameter                       Value         Unit

             VCES      Collector-emitter voltage (VBE = 0)                     1050           V
             VCEO      Collector-emitter voltage (IB = 0)                       400           V
             VEBO      Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms)   V(BR)EBO         V
              IC       Collector current                                         4            A
              ICM      Collector peak current (tP < 5ms)                         8            A
               IB      Base current                                              2            A
              IBM      Base peak current (tP < 5ms)                              4            A
              Ptot     Total dissipation at Tc = 25



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