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                                                                          BUR50S

                        HIGH CURRENT NPN SILICON TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   HIGH CURRENT CAPABILITY
s   FAST SWITCHING SPEED

APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
  EQUIPMENT
                                                              1
DESCRIPTION                                                        2
The BUR50S is a silicon multiepitaxial planar
NPN transistors in JEDEC TO-3 metal case,
intented for use in switching and linear                           TO-3
applications in military and industrial equipment.




                                                     INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                     Value          Unit
     V CBO   Collector-Base Voltage (I E = 0)                   200               V
     V CEO   Collector-Emitter Voltage (I B = 0)                125               V
     V EBO   Emitter-Base Voltage (I C = 0)                       10              V
      IC     Collector Current                                    70              A
     I CM    Collector Peak Current (t p = 10 ms)               100               A
      IB     Base Current                                         20              A
                                          o
     P tot   Total Dissipation at T c  25 C                     350               W
                                                                                  o
     T stg   Storage Temperature                             -65 to 200               C
                                                                                  o
      Tj     Max. Operating Junction Temperature                200                   C


June 1997                                                                                 1/4
BUR50S

THERMAL DATA
                                                                                                                   o
  R thj-case   Thermal Resistance Junction-case                                         Max          0.5               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                            Test Conditions                   Min.   Typ.   Max.   Unit
      I CBO    Collector Cut-off              V CB = 200 V                                                  0.2    mA
               Current (I E = 0)              V CB = 200 V                                                   2     mA
                                              T case = 125 o C
      I CEO    Collector Cut-off              V CE = 125 V                                                   1     mA
               Current (I B = 0)
      I EBO    Emitter Cut-off Current        V EB = 7 V                                                    0.2        

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