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bur51


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                                                                          BUR51

                        HIGH CURRENT NPN SILICON TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR

DESCRIPTION
The BUR51 is a silicon multiepitaxial planar NPN
transistor in modified Jedec TO-3 metal case,
intented for use in switching and linear
applications in military and industrial equipment.
                                                              1
                                                                   2

                                                                   TO-3




                                                     INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                     Value          Unit
     V CBO   Collector-Base Voltage (I E = 0)                   300               V
     V CEO   Collector-Emitter Voltage (I B = 0)                200               V
     V EBO   Emitter-Base Voltage (I C = 0)                       10              V
      IC     Collector Current                                    60              A
     I CM    Collector Peak Current (t p = 10 ms)                 80              A
      IB     Base Current                                         16              A
                                          o
     P tot   Total Dissipation at T c  25 C                     350               W
                                                                                  o
     T stg   Storage Temperature                             -65 to 200               C
                                                                                  o
      Tj     Max. Operating Junction Temperature                200                   C


June 1997                                                                                 1/4
BUR51

THERMAL DATA
                                                                                                              o
  R thj-case   Thermal Resistance Junction-case                                    Max          0.5               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)



  Symbol               Parameter                            Test Conditions              Min.   Typ.   Max.   Unit
      I CBO    Collector Cut-off              V CB = 300 V                                             0.2    mA
               Current (I E = 0)              V CB = 300 V          T case = 125 o C                    2     mA
      I CEO    Collector Cut-off              V CE =200 V                                               1     mA
               Current (I B = 0)
      I EBO    Emitter Cut-off Current        V EB = 7 V                                               0.2        



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