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                                                                               BUR52

                        HIGH CURRENT NPN SILICON TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   MAINTAINS GOOD SWITCHING
    PERFORMANCE EVEN WITHOUT
    NEGATIVE BASE DRIVE

APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
  EQUIPMENT
                                                              1
                                                                   2
DESCRIPTION
The BUR52 is a silicon multiepitaxial planar NPN
transistors in modified Jedec TO-3 metal case,                    TO-3
intented for use in switching and linear                     (version " P ")
applications in military and industrial equipment.




                                                     INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                     Value             Unit
     V CBO   Collector-Base Voltage (I E = 0)                   350               V
     V CEO   Collector-Emitter Voltage (I B = 0)                250               V
     V EBO   Emitter-Base Voltage (I C = 0)                       10              V
      IC     Collector Current                                    60              A
     I CM    Collector Peak Current (t p = 10 ms)                 80              A
      IB     Base Current                                         16              A
     P tot   Total Dissipation at T c  25 o C                   350               W
                                                                                  o
     T stg   Storage Temperature                             -65 to 200               C
                                                                                  o
      Tj     Max. Operating Junction Temperature                200                   C

June 1997                                                                                 1/4
BUR52

THERMAL DATA
                                                                                                             o
  R thj-case   Thermal Resistance Junction-case                                   Max          0.5               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)



  Symbol               Parameter                            Test Conditions             Min.   Typ.   Max.   Unit
      I CBO    Collector Cut-off              V CB = 350 V                                            0.2    mA
               Current (I E = 0)              V CB = 350 V           T case = 125 o C                  2     mA
      I CEO    Collector Cut-off              V CE =250 V                                              1     mA
               Current (I B = 0)
      I EBO    Emitter Cut-off Current        V EB = 7 V                                              0.2        

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