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D45H8 - D45H11
Complementary power transistors
Features
.
Low collector-emitter saturation voltage TAB
Fast switching speed
Applications
Power amplifier 3
2
Switching circuits 1
TO-220
Description
The devices are manufactured in low voltage multi
epitaxial planar technology. They are intended for
general purpose linear and switching applications. Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes Marking Polarity Package Packaging
D44H8 D44H8 NPN TO-220 Tube
D44H11 D44H11 NPN TO-220 Tube
D45H8 D45H8 PNP TO-220 Tube
D45H11 D45H11 PNP TO-220 Tube
October 2009 Doc ID 4213 Rev 5 1/8
www.st.com 8
Absolute maximum ratings D44H8, D44H11, D45H8, D45H11
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
Collector-emitter voltage (IB = 0) D44H8 - D45H8 60 V
VCEO
Collector-emitter voltage (IB = 0) D44H11 - D45H11 80 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 10 A
ICM Collector peak current 20 A
PTOT Total dissipation at Tcase = 25
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