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esm2012


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                                                                       ESM2012DV

                                         NPN DARLINGTON POWER MODULE

s    HIGH CURRENT POWER BIPOLAR MODULE
s    VERY LOW Rth JUNCTION TO CASE
s    SPECIFIED ACCIDENTAL OVERLOAD
     AREAS
s    ULTRAFAST FREEWHEELING DIODE
s    ISOLATED CASE (2500V RMS)
s    EASY TO MOUNT
s    LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
s UPS

s DC/DC & DC/AC CONVERTERS


                                                                  ISOTOP




                                                       INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                         Parameter                     Value          Unit
     VCEV     Collector-Emitter Voltage (VBE = -5 V)              150               V
    VCEO(sus) Collector-Emitter Voltage (IB = 0)                  120               V
     VEBO     Emitter-Base Voltage (I C = 0)                       7                V
       IC     Collector Current                                   120               A
      ICM     Collector Peak Current (t p = 10 ms)                180               A
       IB     Base Current                                         2                A
      I BM    Base Peak Current (t p = 10 ms)                      4                A
      Pt ot   Tot al Dissipation at T c = 25 o C                  175               W
                                                                                    o
      T stg   Storage Temperature                              -55 to 150               C
                                                                                    o
       Tj     Max. Ope rating Junction Temperature                150                   C
                                                                                    o
      VI SO   Insulation Withstand Voltage (AC-RMS)              2500                   C

September 1997                                                                              1/8
ESM2012DV

THERMAL DATA
                                                                                                                      o
  R thj-ca se   Thermal Resistance Junction-case (transistor)                              Max          0.7               C/W
                                                                                                                      o
  R thj-ca se   Thermal Resistance Junction-case (diode)                                   Max          0.9               C/W
   R t hc-h     Thermal Resistance Case-heatsink With Conductive
                                                                                                                      o
                Grease Applied                                                             Max          0.05              C/W

                                                                      o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
  Symbol                Parameter                            Test Conditions                     Min.   Typ.   Max.   Unit
      I CER #   Collecto r Cut-of f             VCE = VCEV                                                     1. 5   mA
                Current (RBE = 5 )              VCE = VCEV            T j = 100 o C                            10     mA
      I CEV #   Collecto r Cut-of f             VCE = VCEV                                                      1     mA
                Current (VBE = -5V)             VCE = VCEV            T j = 100 o C                             7     mA
      I EBO #   Emitter Cut-off Current VEB = 5 V                                                               1     mA
                (I C = 0)
VCEO(SUS) * Collecto r-Emitter                  IC = 5 A      L = 15 mH                          125                      V
            Sustaining Voltage                  Vc lamp = 125 V
      hFE       DC Current Gain                 I C = 100 A      VCE = 5 V                              1200
  V CE(sat )    Collecto r-Emitter              IC   =    70 A   IB   =   0.25 A                        1.25              V
                Saturation Voltage              IC   =    70 A   IB   =   0.25 A Tj = 100 o C           1.35   1. 5       V
                                                IC   =   100 A   IB   =   1A                            1.5               V
                                                IC   =   100 A   IB   =   1 A T j = 100 oC              1.65    2         V
  VBE( sat)     Base-Emitter                    I C = 100 A      IB = 1 A                               2.3               V
                Saturation Voltage              I C = 100 A      IB = 1 A        T j = 100 oC           2.35    3         V
      diC /dt   Rate of Rise of                 VCC = 90 V        RC = 0       tp = 3 



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