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   Very high voltage NPN power transistor for high definition and slim
                                                          CRT display
                                                                                                                           PRELIMINARY DATA

    State-of-the-art technology: diffused collector
    "enhanced generation" EHVS1
    Wider range of optimum drive conditions
    Less sensitive to operating temperature
    In compliance with the 2002/93/EC European                                                                                  3
    directive                                                                                                              2

The HD1750JL is manufactured using Diffused
Collector in Planar technology adopting new and
Enhanced High Voltage Stricture 1 (E.H.V.S.1)
developed to fit High-Definition CRT display. The
new HD product series show improved silicon                                  Internal schematic diagram
efficiency bringing updated performance to the
Horizontal Deflection stage.

    High-definition and slim CRT TV and monitors

Order code
           Part number                               Marking                             Package                               Packaging
             HD1750JL                               HD1750JL                              TO-264                                 Tube

February 2007                                                         Rev 3                                                                  1/10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to             10
change without notice.
Electrical ratings                                                                      HD1750JL

1           Electrical ratings

            Table 1.       Absolute maximum ratings
             Symbol                               Parameter                  Value          Unit

               VCES      Collector-emitter voltage (VBE = 0)                 1700               V
               VCEO      Collector-emitter voltage (IB = 0)                   800               V
               VEBO      Emitte-base voltage (IC = 0)                         10                V
                IC       Collector current                                    24                A
               ICM       Collector peak current (tP < 5ms)                    36                A
                IB       Base current                                         12                A
                IBM      Base peak current (tP < 5ms)                         18                A
               PTOT      Total dissipation at Tc = 25

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