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IRF530
IRF530FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V DSS R DS(on) ID
IRF530 100 V < 0.16 16 A
IRF530F I 100 V < 0.16 11 A
s TYPICAL RDS(on) = 0.12
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY 3 3
2 2
s 175oC OPERATING TEMPERATURE 1 1
s APPLICATION ORIENTED
CHARACTERIZATION TO-220 TO-220FI
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTER INTERNAL SCHEMATIC DIAGRAM
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
IRF530 IRF 530FI
V DS Drain-source Voltage (V GS = 0) 100 V
V DGR Drain- gate Voltage (R GS = 20 k) 100 V
V GS Gate-source Voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo