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                                                                                   IRF530FP
                                                 N - CHANNEL ENHANCEMENT MODE
                                                         POWER MOS TRANSISTOR
        TYPE              V DSS         R DS(on)    ID
IRF530FP                 100 V        < 0.16       10 A

s    TYPICAL RDS(on) = 0.12 
s    100% AVALANCHE TESTED
s    REPETITIVE AVALANCHE DATA AT 100oC
s     LOW GATE CHARGE
s    AVALANCHE RUGGED TECHNOLOGY
s    APPLICATION ORIENTED
     CHARACTERIZATION                                                                      3
                                                                                       2
s    HIGH CURRENT CAPABILITY                                                       1
s    175oC OPERATING TEMPERATURE
                                                                        TO-220FP
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s DC-DC & DC-AC CONVERTER

s AUTOMOTIVE ENVRONMENT (INJECTION,

  ABS, AIR-BAG, LAMP DRIVERS, Etc)
                                                              INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                         Parameter                            Value                  Unit
       V DS     Drain-source Voltage (V GS = 0)                          100                     V
      VDGR      Drain- gate Voltage (R GS = 20 k)                        100                     V
       V GS     Gate-source Voltage                                      

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