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N-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FP
MESH OVERLAYTM MOSFET
TYPE VDSS RDS(on) ID
IRF630M 200 V < 0.40 9A
IRF630FPM 200 V < 0.40 9A
s TYPICAL RDS(on) = 0.35
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES 3 3
s GATE CHARGE MINIMIZED 2 2
This power MOSFET is designed using the compa-
ny's consolidated strip layout-based MESH OVER-
LAYTM process. This technology matches and INTERNAL SCHEMATIC DIAGRAM
improves the performances compared with standard
parts from various sources.
Isolated TO-220 option simplifies assembly and cuts
risk of accidental short circuit in crowded monitor
s MONITOR DISPLAYS
s GENERAL PURPOSE SWITCH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate Voltage (RGS = 20 k) 200 V
VGS Gate- source Voltage
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