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N-CHANNEL 500V - 0.75 - 8A TO-220
PowerMeshTMII MOSFET
TYPE VDSS RDS(on) ID
IRF840 500 V < 0.85 8A
s TYPICAL RDS(on) = 0.75
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
3
s GATE CHARGE MINIMIZED 2
1
DESCRIPTION
(s)
TO-220
The PowerMESHTMII is the evolution of the first
ct
generation of MESH OVERLAYTM. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM
ro du
APPLICATIONS
e P
let
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
b so
-O
POWER SUPPLIES AND MOTOR DRIVES
)
c t(s
ro du
eP
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS
ol
VDGR et
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
500
500
V
V
s
Ob
VGS Gate- source Voltage
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