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mj4032_mj4035


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                                                                                                MJ4032
                                                                                                MJ4035
                                                 COMPLEMENTARY SILICON
                                          POWER DARLINGTON TRANSISTORS
s   SGS-THOMSON PREFERRED SALESTYPES
s   COMPLEMENTARY PNP - NPN DEVICES
s   MONOLITHIC DARLINGTON
    CONFIGURATION
s   INTEGRATED ANTIPARALLEL
    COLLECTOR-EMITTER DIODE

APPLICATIONS
s GENERAL PURPOSE SWITCHING
                                                                            1
s GENERAL PURPOSE AMPLIFIERS                                                          2

DESCRIPTION
The MJ4035 is silicon epitaxial-base NPN power                                    TO-3
transistor in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in general purpose and
amplifier applications.
The complementary PNP type is the MJ4032.
                                                               INTERNAL SCHEMATIC DIAGRAM




                                                                  R1 Typ. = 6 K           R2 Typ. = 55 




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                                  Value                         Unit
                                                         PNP               MJ4032
                                                         NPN               MJ4035
     V CBO   Collector-Base Voltage (I E = 0)                                 100                          V
     V CEO   Collector-Emitter Voltage (I B = 0)                              100                          V
     V EBO   Emitter-Base Voltage (I C = 0)                                       5                        V
      IC     Collector Current                                                  16                         A
      IB     Base Current                                                       0.5                        A
     P tot   Total Dissipation at T c  25 o C                                 150                          W
                                                                                                          o
     T stg   Storage Temperature                                          -65 to 200                          C
                                                                                                          o
      Tj     Max. Operating Junction Temperature                              200                             C
For PNP types voltage and current values are negative.


June 1997                                                                                                         1/4
MJ4032 / MJ4035

THERMAL DATA
                                                                                                         o
  R thj-case   Thermal Resistance Junction-case                               Max          1.17              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                            Test Conditions         Min.   Typ.   Max.   Unit
      I CER    Collector Cut-off               V CE = 100 V                                        1     mA
                                                                        o
               Current (R BE = 1K)             V CE = 100 V     T c = 150 C                        5     mA
      I CEO    Collector Cut-off               V CE = 50 V                                         3     mA
               Current (I B = 0)
      I EBO    Emitter Cut-off Current         V EB = 5 V                                          5     mA
               (I C = 0)
 V (BR)CEO  Collector-Emitter                  I C = 100 mA                         100                      V
            Breakdown Voltage
  V CE(sat)    Collector-Emitter               I C = 10 A      I B = 40 mA                        2.5        V
               Saturation Voltage              I C = 16 A      I B = 80 mA                         4         V
      V BE     Base-Emitter Voltage           I C = 10 A       V CE = 3 V                          3         V
      h FE     DC Current Gain                 I C = 10 A      V CE = 3 V           1000
 Pulsed: Pulse duration = 300 



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