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COMPLEMENTARY SILICON POWER DARLINGTON
s SGS-THOMSON PREFERRED SALESTYPES
The MJ2501 is a silicon epitaxial-base PNP
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-3
metal case. They are intented for use in power
linear and switching applications.
The complementary NPN type is the MJ3001.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-base Voltage (I E = 0) 80 V
V CEO Collector-emitter Voltage (I B = 0) 80 V
V EBO Emitter-base Voltage (I C = 0) 5 V
IC Collector Current 10 A
IB Base Current 0.2 A
P tot Total Dissipation at T c 25 o C 150 W
T stg Storage Temperature -65 to 200 C
Tj Max. Operating Junction Temperature 200 C
For PNP types voltage and current values are negative.
June 1997 1/4
MJ2501 / MJ3001
R thj-case Thermal Resistance Junction-case Max 1.17 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER Collector Cut-off V CE = 80 V 1 mA
Current (R BE = 1 K) T case = 150 o C
V CE = 80 V 5 mA
I CEO Collector Cut-off V CE = 30 V 1 mA
Current (I B = 0) V CE = 40 V 1 mA
I EBO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 100 mA 80 V
(I B = 0)
V CE(sat) Collector-emitter IC = 5 A I B = 20 mA 2 V
Saturation Voltage I C = 10 A I B = 50 mA 4 V
V BE Base-emitter Voltage IC = 5 A V CE = 3 V 3 V
h FE DC Current Gain IC = 5 A V CE = 3 V 1000
Pulsed: Pulse duration = 300
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