Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors ST mjd112_mjd117
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MJD112
MJD117
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s LOW BASE-DRIVE REQUIREMENTS
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s ELECTRICAL SIMILAR TO TIP112 AND 3
TIP117 1
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND DPAK
AMPLIFIER TO-252
(Suffix "T4")
DESCRIPTION
The MJD112 and MJD117 form complementary
PNP - NPN pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM
R1(typ) = 7K
R2(typ) = 200
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Emitter Voltage (IE = 0) 100 V
VCEO Collector-Emitter Voltage (IB = 0) 100 V
VEBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 2 A
ICM Collector Peak Current (t p < 5 ms) 4 A
IB Base Current 0.05 A
Pt ot Tot al Dissipation at T c = 25 o C 20 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Ope rating Junction Temperature 150 C
For PNP type voltage and current values are negative.
September 1997 1/6
MJD112/MJD117
THERMAL DATA
o
R thj-ca se Thermal Resistance Junction-case Max 6.25 C/W
o
Rt hj-amb Thermal Resistance Junction-ambient Max 100 C/W
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collecto r Cut-of f VCB = 100 V 0.02 mA
Current (I E = 0) VCB = 80 V 0.01 mA
ICEO Collecto r Cut-of f VCE = 50 V 0.02 mA
Current (I B = 0)
ICEX Collecto r Cut-of f VCB = 80 V VBE = -1.5V 0.01 mA
Current VCB = 80 V VBE = -1.5V T c = 125 o C 0. 5 mA
I EBO Emitter Cut-off Current VEB = 5 V 2 mA
(I C = 0)
VCEO(sus) Collecto r-Emitter I C = 30 mA 100 V
Sustaining Voltage
V CE(sat ) Collecto r-Emitter IC = 2 A IB = 8 mA 2 V
Saturation Voltage IC = 4 A IB = 40 mA 3 V
VBE( sat) Collecto r-Base IC = 4 A IB = 40 mA 4 V
Saturation Voltage
V BE(on) Base-Emitter Volta ge IC = 2 A VCE = 3 V 2. 8 V
hFE DC Current Gain I C = 0.5 A VCE = 3 V 500
IC = 2 A VCE = 3 V 100 0 120 00
IC = 4 A VCE = 3 V 200
Pulsed: Pulse duration = 300 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo