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                                                                                        MJD122
                                                                                        MJD127
                                         COMPLEMENTARY SILICON POWER
                                              DARLINGTON TRANSISTORS
s    SGS-THOMSON PREFERRED SALESTYPES
s    LOW BASE-DRIVE REQUIREMENTS
s    INTEGRATED ANTIPARALLEL
     COLLECTOR- EMITTER DIODE
s    SURFACE-MOUNTING TO-252 (DPAK)
     POWER PACKAGE IN TAPE & REEL
     (SUFFIX "T4")
s    ELECTRICAL SIMILAR TO TIP122 AND                                                   3
     TIP127
                                                                                   1
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND
  AMPLIFIER.                                                              DPAK
                                                                          TO-252
DESCRIPTION                                                             (Suffix "T4")
The MJD122 and MJD127 form complementary
NPN - PNP pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.                 INTERNAL SCHEMATIC DIAGRAM




                                                              R1 Typ. = 10 K     R 2 Typ. = 150 




ABSOLUTE MAXIMUM RATINGS
    Symbo l                    Parameter                                Valu e                     Un it
                                                     NPN               MJD122
                                                     PNP               MJD127
     V CBO     Collector-Base Voltage (I E = 0)                           100                       V
     V CEO     Collector-Emitter Voltage (I B = 0)                        100                       V
     V EBO     Emitter-Base Voltage (IC = 0)                               5                        V
       IC      Collector Current                                           5                        A
      I CM     Collector Peak Current                                      8                        A
       IB      Base Current                                               100                      mA
      P to t   Total Dissipation at T case  25 o C                        20                        W
                                                                                                    o
     T stg     Storage T emperature                                   -65 to 150                        C
                                                                                                    o
       Tj      Max. Operating Junction Temperature                        150                           C


June 1997                                                                                                   1/6
MJD122 MJD127

THERMAL DATA
                                                                                                              o
  R t hj-ca se   Thermal Resistance Junction-case                               Max           6.25                C/W
                                                                                                              o
  R t hj- amb    Thermal Resistance Junction-ambient                            Max           100                 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                            Test Cond ition s          Min.   Typ .   Max.    Un it
      I CBO      Collector Cut-off             V CB = 100 V                                            10         

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