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mjd31_mjd32


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                                                                    MJD31B/31C
                                                                    MJD32B/32C

           COMPLEMENTARY SILICON POWER TRANSISTORS
s   SGS-THOMSON PREFERRED SALESTYPES
s   SURFACE-MOUNTING TO-252 (DPAK)
    POWER PACKAGE IN TAPE & REEL
    (SUFFIX "T4")
s   ELECTRICAL SIMILAR TO TIP31B/C AND
    TIP32B/C

APPLICATIONS                                                                     3
s GENERAL PURPOSE SWITCHING AND                                             1
  AMPLIFIER TRANSISTORS

DESCRIPTION
s The MJD31B and MJD31C and the MJD32B                           DPAK
  and MJD32C form complementary NPN-PNP                          TO-252
  pairs. They are manufactured using Epitaxial                 (Suffix "T4")
  Base technology for cost-effective
  performance.

                                                     INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                        Parameter                       Value                Uni t
                                                     MJD31B/32B           MJD31C/32C
     V CBO    Collector-Base Voltage (IE = 0)            80                     100     V
     V CEO    Collector-Emitter Voltage (I B = 0)        80                     100     V
     V EBO    Emitter-Base Voltage (I C = 0)                        5                   V
      IC      Collector Current                                     3                   A
     I CM     Collector Peak Current                                5                   A
      IB      Base Current                                          1                   A
                                           o
     P t ot   Total Dissipation at T c = 25 C                      15                   W
                                                                                        o
     T stg    Storage Temperature                             -65 to 150                    C
                                                                                        o
      Tj      Max. O perating Junction Temperature                150                       C


June 1997                                                                                       1/5
MJD31B/31C - MJD32B/32C

THERMAL DATA
                                                                                                                o
  R t hj-ca se   Thermal Resistance Junction-case                                  Max           8.33               C/W
                                                                                                                o
  R t hj- amb    Thermal Resistance Junction-ambient                               Max           100                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                             Test Cond ition s            Min.   Typ .   Max.   Un it
      I Ces      Collector Cut-off             V CB = Max Rating                                          20        



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