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                                                       Low voltage PNP power transistor

   Surface-mounting TO-252 power package in
   tape and reel                                                       TAB
   Complementary to the NPN type MJD31C
   General purpose linear and switching
   equipment                                                                  DPAK
The device is manufactured in planar technology
with "base island" layout. The resulting transistor
shows exceptional high gain performance                   Figure 1.   Internal schematic diagram
coupled with very low saturation voltage.

Table 1.       Device summary
   Order code          Marking                        Package                      Packaging

   MJD32CT4            MJD32C                          DPAK                       Tape and reel

January 2010                                 Doc ID 13673 Rev 3                                         1/9
Electrical ratings                                                                                   MJD32C

1           Electrical ratings

            Table 2.          Absolute maximum ratings
             Symbol                             Parameter                            Value           Unit

              VCBO         Collector-base voltage (IE = 0)                           -100             V
              VCEO         Collector-emitter voltage (IB = 0)                        -100             V
              VEBO         Emitter-base voltage (IC = 0)                               -5             V
                IC         Collector current                                           -3             A
               ICM         Collector peak current                                      -5             A
                IB         Base current                                                -1             A
              PTOT         Total dissipation at Tc = 25 

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