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Low voltage PNP power transistor
Surface-mounting TO-252 power package in
tape and reel TAB
Complementary to the NPN type MJD31C
General purpose linear and switching
The device is manufactured in planar technology
with "base island" layout. The resulting transistor
shows exceptional high gain performance Figure 1. Internal schematic diagram
coupled with very low saturation voltage.
Table 1. Device summary
Order code Marking Package Packaging
MJD32CT4 MJD32C DPAK Tape and reel
January 2010 Doc ID 13673 Rev 3 1/9
Electrical ratings MJD32C
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -100 V
VCEO Collector-emitter voltage (IB = 0) -100 V
VEBO Emitter-base voltage (IC = 0) -5 V
IC Collector current -3 A
ICM Collector peak current -5 A
IB Base current -1 A
PTOT Total dissipation at Tc = 25
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