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                                                                                    MJD50
                                               HIGH VOLTAGE FAST-SWITCHING
                                                     NPN POWER TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   HIGH VOLTAGE CAPABILITY
s   SURFACE-MOUNTING TO-252 (DPAK)
    POWER PACKAGE IN TAPE & REEL
    (SUFFIX "T4")
s   ELECTRICAL SIMILAR TO TIP50

APPLICATIONS                                                                    3
s SWITCH MODE POWER SUPPLIES                                                1
s AUDIO AMPLIFIERS
s GENERAL PURPOSE SWITCHING AND
                                                                 DPAK
  AMPLIFIER
                                                                 TO-252
DESCRIPTION                                                    (Suffix "T4")
The MJD50 is manufactured using Medium
Voltage Epitaxial Planar technology, resulting in a
rugged high performance cost-effective transistor.

                                                       INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                        Parameter                      Value                Uni t
     V CBO    Collector-Base Voltage (IE = 0)                     500                  V
     V CEO    Collector-Emitter Voltage (I B = 0)                 400                  V
     V EBO    Emitter-Base Voltage (I C = 0)                       5                   V
      IC      Collector Current                                    1                   A
     I CM     Collector Peak Current (tp < 5 ms)                   2                   A
      IB      Base Current                                        0.6                  A
     I BM     Base Peak Current (t p < 5 ms)                      1.2                  A
     P t ot   Total Dissipation at T c = 25 o C                   15                   W
                                                                                       o
     T stg    St orage Temperature                             -65 to 150                  C
                                                                                       o
      Tj      Max. Operating Junction Temperature                 150                      C


July 1997                                                                                      1/6
MJD50

THERMAL DATA
                                                                                                             o
  R t hj-ca se   Thermal Resistance Junction-case                                Max          8.33               C/W
                                                                                                             o
  R t hj- amb    Thermal Resistance Junction-ambient                             Max          100                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                            Test Cond ition s          Min.   Typ .   Max.   Un it
      I CES      Collector Cut-off            V CE = 500 V                                            0.1    mA
                 Current (V BE = 0)
      I CEO      Collector Cut-off            V CE = 300 V                                            0.1    mA
                 Current (IB = 0)
      I EBO      Emitter Cut-off Current      V EB = 5 V                                               1     mA
                 (I C = 0)
  V CEO(sus)     Collector-Emitter            I C = 30 mA                              400                       V
                 Sustaining Voltage
  V CE(sat )     Collector-Emitter            IC = 1 A       IB = 0.2 A                                1         V
                 Saturation Voltage
  V BE(on)       Base-Emitter O n             IC = 1 A       VCE = 10 V                               1.5        V
                 Voltage
      hFE        DC Current G ain             I C = 0.3 A     VCE = 10 V               30             150
                                              IC = 1 A        V CE = 10 V              10
       fT        Transition F requency        I C = 0.2 A     VCE = 10 V    f=2MHz     10                    MHz
      hf e       Small Signal Current         I C = 0.2 A     VCE = 10 V    f=1kHz     25
                 Gain
 Pulsed: Pulse duration = 300 

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