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SILICON NPN SWITCHING TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
DESCRIPTION
The MJE13005 is a silicon multiepitaxial mesa
NPN transistor in Jedec TO-220 plastic package
particularly intended for switch-mode
applications.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CEV Collector-Emitter Voltage 700 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 4 A
I CM Collector Peak Current 8 A
IB Base Current 2 A
I BM Base Peak Current 4 A
P tot Total Power Dissipation at Tcase 25 o C 75 W
o
T stg Storage Temperature -65 to +150 C
o
Tj Max. Operating Junction Temperature 150 C
October 1995 1/4
MJE13005
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.67 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Collector Cut-off V CE = 700V 1 mA
I CEV
Current (V BE = -1.5V) V CE = 700V T case = 100 o C 5 mA
Emitter Cut-off
I EBO V EB = 9 V 1 mA
Current (I C = 0)
Collector-Emitter
VCEO(sus) Sustaining Voltage I C = 10 mA 400 V
(I B = 0)
IC = 1 A I B = 0.2 A 0.5
Collector-Emitter V
V CE(sat) IC = 2 A I B = 0.5 A 0.6
Saturation Voltage V
IC = 4 A IB = 1 A 1
Base-Emitter IC = 1 A I B = 0.2 A 1.2 V
V BE(sat)
Saturation Voltage IC = 2 A I B = 0.5 A 1.6
IC = 1 A V CE = 5 V 10 60 V
h FE DC Current Gain 30
IC = 2 A V CE = 5 V 8 40
t on Turn-on Time IC = 2 A 0.8
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