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mje13007a


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                                                                         MJE13007A

                                 SILICON NPN SWITCHING TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   HIGH CURRENT CAPABILITY

APPLICATIONS
s SWITCHING REGULATORS
s MOTOR CONTROL



DESCRIPTION                                                                          3
The MJE13007A is silicon multiepitaxial mesa                                     2
                                                                             1
NPN power transistor mounted in Jedec TO-220
plastic package.
They are inteded for use in motor control,                         TO-220
switching regulators etc.




                                                        INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                        Value                  Unit
     V CEV   Collector-Emitter Voltage (V BE = -1.5V)              850                    V
     V CEO   Collector-Emitter Voltage (I B = 0)                   400                    V
     V EBO   Emitter-Base Voltage (I C = 0)                         9                     V
      IC     Collector Current                                      8                     A
     I CM    Collector Peak Current                                16                     A
      IB     Base Current                                           4                     A
     I BM    Base Peak Current                                      8                     A
      IE     Emitter Current                                       12                     A
     I EM    Emitter Peak Current                                  24                     A
     P tot   Total Dissipation at T c  25 o C                      80                     W
                                                                                         o
     T stg   Storage Temperature                                -65 to 150                   C
                                                                                         o
      Tj     Max. Operating Junction Temperature                   150                       C


June 1997                                                                                        1/4
MJE13007A

THERMAL DATA
                                                                                                                        o
  R thj-case   Thermal Resistance Junction-case                                            Max            1.56              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol                Parameter                               Test Conditions                    Min.   Typ.   Max.   Unit
      I CEV    Collector Cut-off               V CE = rated V CEV                                                 1     mA
                                                                                       o
               Current (V BE = -1.5V)          V CE = rated V CEV           T c = 100 C                           5     mA
      I EBO    Emitter Cut-off Current         V EB = 9 V                                                         1     mA
               (I C = 0)
 V CEO(sus)  Collector-Emitter                 I C = 10 mA                                         400                      V
             Sustaining Voltage
  V CE(sat)    Collector-Emitter               IC   =   2   A     IB   =   0.4 A                                  1         V
               Saturation Voltage              IC   =   5   A     IB   =   1A                                    1.5        V
                                               IC   =   8   A     IB   =   2A                                     3         V
                                               IC   =   5   A     IB   =   1A      T c = 100 o C                  2         V
  V BE(sat)    Base-Emitter                    IC = 2 A           I B = 0.4 A                                    1.2        V
               Saturation Voltage              IC = 5 A           IB = 1 A                                       1.6        V
                                               IC = 5 A           IB = 1 A         T c = 100 o C                 1.5        V
      h FE     DC Current Gain                 IC = 2 A           V CE = 5 V                        8             40
                                               IC = 5 A           V CE = 5 V                        6             30
       fT      Transition Frequency            I C = 0.5 A        V CE = 10 V       f = 1 MHz       4                   MHz
      C CBO    Output Capacitance              IE = 0           V CB = 10 V        f = 0.1 MHz            110               pF


RESISTIVE LOAD
  Symbol                Parameter                               Test Conditions                    Min.   Typ.   Max.   Unit
       t on    Turn-on Time                    V CC = 125 V I C = 5 A                                            0.7        



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