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mje13009


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                                                                             MJE13009

                                 SILICON NPN SWITCHING TRANSISTOR

s   SGS-THOMSON PREFERRED SALESTYPE

DESCRIPTION
The MJE13009 is a multiepitaxial mesa NPN
transistor. It is mounted in Jedec TO-220 plastic
package, intended for use in motor controls,
switching regulators, deflection circuits, etc.

                                                                                      3
                                                                                  2
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                                                                   TO-220




                                                        INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                        Value                   Unit
     VCEO    Collector-Emitter Voltage (IB = 0)                    400                     V
     VCEV    Collector-Emitter Voltage (VBE = -1.5 V)              700                     V
     VEBO    Emitter-Base Voltage (I C = 0)                         9                      V
      IC     Collector Current                                     12                      A
     ICM     Collector Peak Current (t p  10 ms)                   24                      A
      IB     Base Current                                           6                      A
     I BM    Base Peak Current (t p  10 ms)                        12                      A
      IE     Emitter Current                                       18                      A
     I EM    Emitter Peak Current                                  36                      A
     Pt ot   Tot al Power Dissipation at T c  25 Co
                                                                   100                     W
                                                                                          o
     T stg   Storage Temperature                                -65 to 150                    C
                                                                                          o
      Tj     Max. Ope rating Junction Temperature                  150                        C

September 1997                                                                                    1/6
MJE13009

THERMAL DATA
                                                                                                               o
  R thj-ca se   Thermal Resistance Junction-case                                    Max          1.25              C/W

                                                                o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
  Symbol               Parameter                         Test Conditions                  Min.   Typ.   Max.   Unit
      ICEV      Collecto r Cut-of f          VCEV = rated value                                          1     mA
                Current                      VBE(off ) = 1.5 V
                                             VCEV = rated value
                                             VEB(off ) = 1.5 V
                                             T cas e = 100o C                                            5     mA
      I EBO     Emitter Cut-off              VEB = 9 V                                                   1     mA
                Current (I C = 0)
 V CEO(su s) Collecto r-Emitter              I C = 10 mA                   IE = 0         400                      V
             Sustaining Voltage
  V CE(sat )    Collecto r-Emitter           IC = 5 A                    IB   =   1A                     1         V
                Saturation Voltage           IC = 8 A                    IB   =   1.6 A                 1. 5       V
                                             I C = 12 A                  IB   =   3A                     3         V
                                             IC = 8 A                    IB   =   1.6 A
                                             T cas e = 100o C                                            2         V
  VBE( sat)     Base-Emitter                 IC = 5 A                     IB = 1 A                      1. 2       V
                Saturation Voltage           IC = 8 A                     IB = 1.6 A                    1. 6       V
                                             IC = 8 A                     IB = 1.6 A
                                             T cas e = 100o C                                           1. 5       V
      hFE       DC Current Gain              IC = 5 A                    VCE = 5 V         8            40
                                             IC = 8 A                    VCE = 5 V         6            30
       fT       Transistor Frequ ency        I C = 500 mA                VCE = 10 V        4                   MHz
      C OB      Output Capacita nce          VCB = 10 A                   IE = 0                 180               pF
                                             f = 0.1 MHz
                                             RESISTIVE LOAD                                             1. 1       



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