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mje210


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                                                                                     MJE210

                                                         SILICON PNP TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   PNP TRANSISTOR

DESCRIPTION
The MJE210 is a silicon epitaxial-base PNP
transistor in Jedec SOT-32 plastic package,
designed for low voltage, low power, high gain
aydio amplifier applications.
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                                                                                     2
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                                                                       SOT-32




                                                            INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                            Value                  Unit
     V CBO   Collector-Base Voltage (IE = 0)                           -40                    V
     V CEO   Collector-Emitter Voltage (I B = 0)                       -25                    V
     V EBO   Base-Emitter Voltage (IC = 0)                              -8                    V
      IC     Collector Current                                          -5                    A
     I CM    Collector Peak Current                                    -10                    A
      IB     Base Current                                               -1                    A
             Total Power Dissipation at T case  25 o C                 15
     P tot                                                                                    W
                                     at T amb  25 o C                  1.5
                                                                                             o
     T stg   Storage Temperature                                    -65 to 150                   C
                                                                                             o
      Tj     Max Operating Junction Temperature                        150                       C


September 1997                                                                                       1/4
MJE210

THERMAL DATA
                                                                                                               o
  R thj-amb    Thermal Resistance Junction-ambient                             Max              83.4               C/W
                                                                                                               o
  R thj-case   Thermal Resistance Junction-case                                Max              8.34               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol              Parameter                          Test Conditions                 Min.   Typ.   Max.    Unit
               Collector Cut-off            V CB = -40 V                                               -100        nA
      I CBO
               Current (I E = 0)            V CB = -40 V              T CASE = 125 o C                 -100        



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