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mje802-mje803


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                                                                                   MJE802
                                                                                   MJE803

             SILICON NPN POWER DARLINGTON TRANSISTORS

s   SGS-THOMSON PREFERRED SALESTYPES

DESCRIPTION
The MJE802 and MJE803 are silicon
epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in
Jedec SOT-32 plastic package.They are intended
for use in medium power linear and switching
applications.                                                                          1
                                                                                   2
                                                                               3


                                                                     SOT-32




                                                          INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                           Parameter                      Value                  Unit
     V CBO    Collector-Base Voltage (IE = 0)                        80                     V
     V CEO    Collector-Emitter Voltage (I B = 0)                    80                     V
     V EBO    Base-Emitter Voltage (IC = 0)                           5                     V
      IC      Collector Current                                       4                     A
      IB      Base Current                                           0.1                    A
     P tot    Total Power Dissipation at T case  25 o C              40                     W
                                                                                           o
     T stg    Storage Temperature                                 -65 to 150                   C
                                                                                           o
      Tj      Max Operating Junction Temperature                     150                       C
For PNP types voltage and current values are negative.




January 1997                                                                                       1/4
MJE802-MJ803

THERMAL DATA
                                                                                                          o
  R thj-amb    Thermal Resistance Junction-ambient                            Max           3.13              C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol              Parameter                            Test Conditions           Min.   Typ.   Max.   Unit
                                             V CB = rated V CBO                                    100        



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