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MJE802
MJE803
SILICON NPN POWER DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The MJE802 and MJE803 are silicon
epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in
Jedec SOT-32 plastic package.They are intended
for use in medium power linear and switching
applications. 1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (IE = 0) 80 V
V CEO Collector-Emitter Voltage (I B = 0) 80 V
V EBO Base-Emitter Voltage (IC = 0) 5 V
IC Collector Current 4 A
IB Base Current 0.1 A
P tot Total Power Dissipation at T case 25 o C 40 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max Operating Junction Temperature 150 C
For PNP types voltage and current values are negative.
January 1997 1/4
MJE802-MJ803
THERMAL DATA
o
R thj-amb Thermal Resistance Junction-ambient Max 3.13 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V CB = rated V CBO 100 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo