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RF & MICROWAVE TRANSISTORS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
P OUT = 35 W MIN. WITH 10.7 dB GAIN
.280 2LFL (S068)
ORDER CODE BRANDING
The MSC81035M is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035M. MSC81035M of-
fers improved saturated ouput power and collec-
tor efficiency based on the test circuit described
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high reli-
ability and product consistency.
The MSC81035M is housed in the IMPACTM 1. Collector 3. Emitter
package with internal input matching. 2. Base 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25
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