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RF & MICROWAVE TRANSISTORS
. REFRACTORY\GOLD METALLIZATION
RUGGEDIZED VSWR 20:1
INTERNAL INPUT/OUTPUT MATCHING
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
P OUT = 250 W MIN. WITH 6.2 dB GAIN
.400 x .400 2NLFL (S042)
ORDER CODE BRANDING
The MSC81250M device is a high power pulsed
transistor specifically designed for DME/TACAN
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81250M is housed in the unique 1. Collector 3. Emitter
AMPACTM package with internal input/output 2. Base 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25
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